| PART |
Description |
Maker |
| MAGX-000035-030000 MAGX-000035-SB1PPR MAGX-000035- |
GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| MAGX-003135-SB1PPR AGX-003135-030L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
30W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| PHI617-30 PH1617-30 |
Wireless Bipolar Power Transistor/ 30W 1.6 - 1.7 GHz
Wireless Bipolar Power Transistor, 30W 1.6-1.7 GHz
CONNECTOR ACCESSORY 连接器附
|
Tyco Electronics
Electronic Theatre Controls, Inc.
PCA Electronics, Inc.
|
| CGHV27015S-AMP1 CGHV27015S-TR |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| TGA2611-SM-15 |
2 6 GHz GaN LNA
|
TriQuint Semiconductor
|
| MGFS45V2735 MGFS45V273511 |
2.7-3.5 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
| CG2H80015D |
15 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CG2H80060D |
60 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
